jojolucky
Joined: 22 May 2008
Posts: 1
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 Posted: Thu May 22, 2008 7:41 am Post subject: M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB datasheet |
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The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally a 12V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.
The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations.The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and can be easily adapted to a large variety of system clock frequencies and microprocessors. All Writes are Asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.
The device has a boot block architecture with an array of 8 parameter block of 64Kb each and 31 main blocks of 512Kb each. The parameter blocks can be located at the top of the address space, M58BW016BT, M58BW016DT or at the bottom, M58BW016BB, M58BW016DB. |
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